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| Preliminary Product Description Stanford Microdevices' SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-289 5-2000 MHz Medium Power GaAsHBT Amplifier Product Features * Patented High Reliability GaAs HBT Technology * High Output 3rd Order Intercept : +41.5 dBm typ. * at 1960 MHz Surface-Mountable Power Plastic Package Typical IP3, P1dB, Gain 45 40 35 30 25 20 15 10 5 0 IP3 IP3 dBm P1dB Gain(dB) P1dB Gain(dB) Applications * PCS, Cellular Systems * High Linearity IF Amplifiers 850 MHz 1960 MHz Symbol P 1dB S 21 S11 IP3 NF Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression Small signal gain Input VSWR Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) Noise Figure f = 850 MHz f = 1960 MHz f = 850 MHz f = 1960 MHz f = 850 MHz f = 1960 MHz f = 850 MHz f = 1960 MHz f = 850 MHz f = 1960 MHz V s = 8V Rbias = 27 ohms Vdevice = 5 V typ. Units dB m dB m dB dB dB m dB m dB dB mA C/W Min. Typ. 24.0 24.0 Max. 18.0 20.0 15.0 1.3:1 1.7:1 21.5 38.0 40.5 41.5 5.0 5.7 Id Rth, j-l Device Current Thermal Resistance (junction - lead) 85 105 108 120 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 1 SXA-289 5-2000 MHz Power Amplifier 850 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency 26 25 dBm Gain vs. Frequency 25 23 dB 24 23 22 21 800 -40C 25C 85C 21 25C -40C 19 17 15 85C 825 850 875 MHz 900 925 950 800 825 850 875 MHz 900 925 950 Input/Output Return Loss, Isolation vs Frequency 5 0 -5 -10 -15 -20 -25 -30 -35 800 45 S22 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 43 dBm 41 39 37 35 800 dB 25C 85C S11 -40C S12 850 MHz 900 950 825 850 875 MHz 900 925 950 Third Order Intercept vs Tone Power 44 42 25C dBm Device Current (mA) Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 40 85C -40C 38 36 0 3 6 9 12 15 POUT per tone (dBm) 2 4 VS (V) 6 8 10 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 2 SXA-289 5-2000 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency 26 25 dBm Gain vs. Frequency 20 18 -40C dB 24 23 22 21 1930 1940 25C 85C 16 25C -40C 14 12 10 1950 1960 MHz 85C 1970 1980 1990 1930 1940 1950 1960 MHz 1970 1980 1990 Input/Output Return Loss, Isolation vs Frequency 0 -5 -10 dB 44 S22 S11 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 42 25C 85C -15 -20 -25 -30 -35 1930 1940 1950 40 38 36 -40C S12 1960 MHz 1970 1980 1990 1930 1940 1950 1960 MHz 1970 1980 1990 Third Order Intercept vs Tone Power Device Current vs. Source Voltage 44 25C Device Current (mA) 42 dBm 40 38 36 34 0 3 85C -40C 180 160 140 120 100 80 60 40 20 0 0 25C -40C 85C 6 9 12 15 2 4 VS (V) 6 8 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 3 850 MHz Application Circuit SXA-289 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Vs Recommended Bias Resistor Values Supply Voltage(Vs) 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Rbias 0.1 F (SIZE A) 390 68pF Rbias (Ohms) Power Rating Rbias 1000pF 180 33 nH Z=50, 12.9 33 nH 100 pF SXA-289 RFin 390 Ohms 180 Ohms 0.1uF 1000pF 68 pF RFout 100pF 33nH 33nH 100pF 100 pF 5.6 pF 5.6pF SXA-289 850 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 850 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V 0.1 F (SIZE A) Frequency Small Signal Gain (dB) Input Return Loss (dB) 850 M H z 20.0 -22.8 37.7* 23.0 68 pF 220 2 6 Rbias=4.3 (Rohm) UMZ1N 1 5 3 Output IP3 (dBm) P1dB (dBm) 1000 pF 4 Vdev 33 nH 100 pF *Note: IP3 performance degraded due to lower (4.5V) device voltage. GND UMZ1N 0.1 uF 220 1000pF 68pF 1.8 K 750 VCC 4.3 Z=50, 12.9 SXA-289 RF IN 100 pF 5.6 pF 1 1.8K 33nH RF OUT 850 MHz Schematic 100pF 5.6pF 750 100pF NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 850 MHz Active Bias Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 4 1960 MHz Application Circuit SXA-289 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) Rbias (Ohms) Power Ratings 7V 18 0.5W 8V 27 1.0W 10V 47 1.5W 12V 62 2.0W Rbias 0.1 F (SIZE A) 390 1000pF 180 22nH Z=50, 45.5 22pF Rbias 22nH 68pF 390 Ohms 180 Ohms RFin 0.1uF 1000pF 22pF RFout 68pF 22nH 22nH 68pF 68 pF SXA-289 1.8 pF SXA-289 1.8pF 1960 MHz Schematic STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V Frequency Small Signal Gain (dB) Input Return Loss (dB) Output IP3 (dBm) 1960 M H z 14.9 -12.1 38.0* 23.3 0.1 F (SIZE A) 22 pF 220 2 6 1 (Rohm) UMZ1N 1000 pF 4 5 3 Rbias=4.3 Vdev 22nH P1dB(dBm) *Note: IP3 performance degraded due to lower (4.5V) device voltage. GND 1.8 K 750 68 pF 68pF Z=50, 45.5 UMZ1N 0.1 uF 220 22pF VCC 4.3 1000pF 1.8K 22nH SXA-289 1.2 pF RF IN 1 RF OUT 1960 MHz Schematic 68pF 750 1.2pF 68pF NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 1960 MHz Active Bias Evaluation Board Layout 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 5 Absolute Maximum Ratings Parameter Device Voltage Device Current Power Dissipation RF Input Power Junction Temperature Operating Temperature Storage Temperature SXA-289 5-2000 MHz Power Amplifier Part Number Ordering Information Part Number SXA-289 Absolute Maximum 6V 200mA 1500mW 100mW +150C -40C to +85C -65C to +150C Pin # 1 2 3 4 Devices Per Reel 1000 Reel Size 7" Part Symbolization The part will be symbolized with a "XA2" designator on the top surface of the package. Pin Description Function Base GND & Emitter Collector Base Pin Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. GND & Emitter Same as Pin 2 Package Dimensions .161.006 .096.006 .041.006 .008 .059.004 .038.002 .036.002 .048.002 .010.002 TYP(2X) .016REF .118REF .177.004 .118.003 .059.003 .019 +.003 -.002 .059 .010 .068.004 .034 .016 +.003 -.002 .030.004 .105.002 MARKING AREA DOT DENOTES PIN 1 +3 5 -4 .041REF .117.002 TOP VIEW .024.004 .161 REF +.002 .015 -.001 TYP(4X) PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.stanfordmicro.com EDS-100622 Rev E 6 |
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